Title: Variation Effect of Silicon Film Thickness on Electrical Properties of NANOMOSFET

Issue Number: Vol. 8, No. 4
Year of Publication: Dec - 2018
Page Numbers: 198-205
Authors: A Tijjani, G.S.M. Galadanci, G. Babaji and S.M. Gana
Journal Name: International Journal of New Computer Architectures and their Applications (IJNCAA)
- Hong Kong
DOI:  http://dx.doi.org/10.17781/P002545


Owing to the fact that metal oxide semiconductor field effect transistors (MOSFETs) can be effortlessly assimilated into ICs, they have become the heart of the growing semiconductor industry. The need to procure low power dissipation, high operating speed and small size requires the scaling down of these devices. This fully serves the Moore’s Law. But scaling down comes with its own drawbacks which can be substantiated as the Short Channel Effect. The working of the device deteriorates owing to SCE. In this work numerical simulations have been performed to investigate the electronic transport through the Silicon (Si) channel of four terminal Nano-MOS namely; drain, source, top gate and bottom gate. Also, the thickness of Silicon film channel is varied from 1.5 nm, 2.5 nm, 3.5 nm, 4.5 nm and 5.5 nm with other structural dimensions remain unchanged. The simulation is carried out at room temperature (RT) using Nano-MOS simulating software. Three models have been presented such as; ballistic transport using Green’s function approach, ballistic transport using semi classical approach, and drift diffusion transport. The electrical properties such as 2D electron density of the sub bands, sub bands energy profile and drain current - gate voltage (IDS-VGS) have been plotted to compare the performance of these three transport models. From the simulation analysis, the drift diffusion transport model shows low performance in comparison with the two other models, maybe due to the electron gas scattering encountered during the transport through Si channel. Meanwhile, Green’s function approach and semi classical approach shows almost similar results with high performance.