Title: Low Noise Power Amplifier in 28-nm UTBB FDSOI Technology with Forward Body Bias

Issue Number: Vol. 8, No. 2
Year of Publication: Jun - 2018
Page Numbers: 129-132
Authors: Adnan Harb, Ali Mohsen, Nathalie Deltimple and Abraham Serhane
Journal Name: International Journal of Digital Information and Wireless Communications (IJDIWC)
- Hong Kong
DOI:  http://dx.doi.org/10.17781/P002419


This paper presents a design of mm-wave LNPA which generates a large output power and low noise figure in one stage for a harmonic feedback oscillator block at the candidate of 5G; frequency 26 GHz. The LNPA is designed in the 28 nm UTBB FD-SOI. The benefits of this technology are stated with the effects of body biasing for the mm-wave LNPA. This amplifier is designed using a common source topology. It achieves 14 dBm Psat and 2.5 dB noise figure “NF”.