Title: SIMULATION STUDY OF N-ZNO/P-SI HETERO-JUNCTION SOLAR CELL

Year of Publication: 2012
Page Numbers: 1-7
Authors: Alexender Demetrech Pogrebnyak , Khalaf Hassn Ali, Abid al kareem Muhammed
Conference Name: The International Conference on Computing, Networking and Digital Technologies (ICCNDT2012)
- Bahrain

Abstract:


In this paper the simulation program SCAPS–1.0 is used to study the structure of n-ZnO/p-Si hetero-junction solar cell. This program is designed basically for the simulation and studying the properties of photonic devices. We explored the important controllable design parameters’ affecting the performance of the p-n junction solar cells, as operating temperature that we noticed an increasing in J-V characteristics by increasing temperature. The effect of thickness and the p-layer of each layer on the performance of the cell was studied. In the simulation 3 um p- layer and 3 um n- layer works as the best for given doping density, if we change the optimum value, the efficiency can reach to 5.83% with Voc=0.589 V, jsc=12.451mA at 300 k, Na=Nd=1019, in this case, we have determined the optimum parameters to achieve the best performance of this type of cell using SCAP and compared it with practical ZnO/Si cell.