Title: Investigation of In-situ Doping Profile for N+/P/N+ Bidirectional Switching Device using Si1-xGex/Si/Si1-xGex Structure

Year of Publication: Nov - 2014
Page Numbers: 26-31
Authors: Il Pyo Roh, Hoon Shin Sang, Kyu Beom Kim, Heub Song Yun
Conference Name: The International Conference on Electrical, Electronics, Computer Engineering and their Applications (EECEA2014)
- Malaysia


In this research, we proposed steep and uniform doping profile of N+/P/N+ multilayer for bidirectional two-terminal switching diode based on Si1-xGex alloy. In strained Si1-xGex alloy, the phosphorus doping profile is more stable because it has higher incorporation rate of phosphorus compared with the unstrained silicon. Thus, we obtained the N+/P/N+ junction doping profile with N+ doping ( > 1 × 1020) and P doping ( < 2 × 1019) concentration and could observe the bidirectional current flow. This research lies in founding fundamental researches for realizing bidirectional two-terminal switching device of Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) that can possible improve current density by controlling length of the P-type layer and doping profile by using an optimized process parameter.